SPW47N60C3FKSA1

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SPW47N60C3FKSA1 - Infineon
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Краткое описание: 600V 47A N-Channel MOSFET, 70mR Rds On, TO-247
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 600V drain-source voltage and 47A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 70mΩ Rds On resistance and 415W power dissipation. Designed for through-hole mounting in a TO-247 package, it boasts a fast 8ns fall time and 18ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is suitable for demanding power applications.
RoHS Compliant
Mount Through Hole
Series CoolMOS™
Fall Time 8ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 70mR
Halogen Free Not Halogen Free
Package/Case TO-247
RoHS Compliant Yes
Input Capacitance 6.8nF
Power Dissipation 415W
Number of Elements 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 111ns
Max Power Dissipation 415W
Max Dual Supply Voltage 600V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 47A
Drain to Source Voltage (Vdss) 600V

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