SPZT3904T1G

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SPZT3904T1G - Onsemi
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Краткое описание: NPN BJT 40V 200mA 1.5W SOT-223-4
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

The SPZT3904T1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It has a gain bandwidth product of 300MHz and a maximum power dissipation of 1.5W. The device is packaged in a SOT-223-4 package and is lead-free and RoHS compliant. It operates over a temperature range of -55°C to 150°C.
RoHS Compliant
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223-4
RoHS Compliant Yes
Package Quantity 1000
Radiation Hardening No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 1.5W
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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