SQ2361EES-T1-GE3

Снят с производства
SQ2361EES-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH JFET -60V -2.5A 115mR SOT-23 Surface Mount
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET, surface mount, SOT-23-3 package. Features -60V drain-to-source voltage, -2.5A continuous drain current, and 115mΩ drain-to-source resistance. Operates from -55°C to 175°C with a maximum power dissipation of 2W. Includes 7ns turn-on delay, 8ns fall time, and 19ns turn-off delay. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.050717oz
Polarity P-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 150mR
Nominal Vgs -2.5V
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 545pF
Threshold Voltage -1.5V
Number of Channels 1
Turn-On Delay Time 7ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant Unknown
Max Power Dissipation 2W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 115mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -2.5A
Drain to Source Voltage (Vdss) -60V

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