SQ4470EY-T1-GE3

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SQ4470EY-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 60V 16A 12mR SO-8 Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET, 60V Vdss, 16A continuous drain current, and 12mR Rds On resistance. Features a low 3V threshold voltage and 3V nominal Vgs, with fast switching speeds including 9ns fall time, 13ns turn-on delay, and 25ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 7.1W. Packaged in an 8-pin SOIC surface-mount package, ideal for high-efficiency power applications.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.01787oz
Polarity N-CHANNEL
Fall Time 9ns
Packaging Tape and Reel
Rds On Max 12mR
Nominal Vgs 3V
Package/Case SO
Package Quantity 2500
Input Capacitance 3.165nF
Threshold Voltage 3V
Number of Channels 1
Turn-On Delay Time 13ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Reach SVHC Compliant Unknown
Max Power Dissipation 7.1W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 12mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 60V

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