SQ4946AEY-T1-GE3
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Краткое описание:
2-Ch N-Ch JFET 60V 7A 40mR SO-8
Дополнительная информация
Dual N-channel MOSFET, surface mount, designed for general-purpose small signal applications. Features a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 7A. Offers a low drain-source on-resistance (Rds On) of 33mΩ, with a maximum of 40mΩ. Operates across a wide temperature range from -55°C to 175°C. Packaged in a compact SO (SOP-8) package, tape and reel supplied. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 2.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 750pF |
| Threshold Voltage | 2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22.4ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 40mR |
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