SQD40N06-14L-GE3

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SQD40N06-14L-GE3 - Vishay(Siliconix)
Краткое описание: 60V 40A N-Channel Power MOSFET, 14mR Rds On, TO-252
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 60V drain-source voltage and 40A continuous drain current. Offers a low 14mΩ maximum drain-source on-resistance. Designed for surface mounting in a TO-252-3 package, this component boasts fast switching speeds with an 8ns turn-on delay and 9ns fall time. Maximum power dissipation is 75W, with an operating temperature range of -55°C to 175°C.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 9ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 14mR
Package/Case TO-252-3
Package Quantity 2000
Input Capacitance 2.105nF
Threshold Voltage 2V
Number of Channels 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Reach SVHC Compliant Unknown
Max Power Dissipation 75W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 11mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 14mR

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