SQD50N04-09H-GE3
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Краткое описание:
N-CH MOSFET 40V 50A 9mR DPAK Surface Mount
Дополнительная информация
N-channel MOSFET with 40V drain-source breakdown voltage and 50A continuous drain current. Features low 9mΩ Rds(on) at 10V/250A and 15mΩ Rds(on) at 4.5V/250A, with a 3.8V threshold voltage. Operates across a -55°C to 175°C temperature range, offering 83W maximum power dissipation. Packaged in DPAK for surface mounting, this component is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Nominal Vgs | 3.8V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 4.24nF |
| Power Dissipation | 83W |
| Threshold Voltage | 3.8V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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