SQJ960EP-T1_GE3
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Краткое описание:
60V 8A N-Channel MOSFET, 40mΩ Rds(on), Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 60V Vdss, 8A continuous drain current, and 36mΩ maximum drain-source on-resistance. Features 2 N-Channel elements, 2V threshold voltage, and 735pF input capacitance. Operates from -55°C to 175°C with a maximum power dissipation of 34W. Packaged in a surface-mount POWERPAK SO-8L, 4-pin configuration, supplied on tape and reel. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 735pF |
| Threshold Voltage | 2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 6ns |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 34W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 40mR |
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