SSD3030P
Краткое описание:
P-CH MOSFET 30V 30A DPAK SMT
Дополнительная информация
P-channel enhancement mode power MOSFET with 30V drain-source voltage and 30A continuous drain current. Features low 30mOhm drain-source resistance at 10V gate-source voltage. Surface-mount DPAK (TO-252AA) package with gull-wing leads, measuring 6.6mm x 6.2mm x 2.35mm. Includes typical gate charge of 20nC at 10V and input capacitance of 800pF at 15V. Maximum power dissipation is 50W, with an operating temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.2(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.35(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 20nC |
| Typical Gate Charge @ Vgs | 20@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 30@10VmOhm |
| Typical Input Capacitance @ Vds | 800@15VpF |
| Maximum Continuous Drain Current | 30A |
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