SSD3055LA
Краткое описание:
N-CH MOSFET 25V 15A DPAK TO-252 SMT Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-252 DPAK package, featuring a 25V drain-source voltage and 15A continuous drain current. This surface-mount device offers a low drain-source on-resistance of 65mOhm at 10V gate-source voltage. It supports a maximum gate-source voltage of ±12V and has a maximum power dissipation of 50,000mW. The DPAK package, with a lead-frame SMT construction and gull-wing leads, measures 6.6mm x 6.2mm x 2.35mm. Operating temperature range is -55°C to 175°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.2(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.35(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 6nC |
| Typical Gate Charge @ Vgs | 6@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 25V |
| Maximum Drain Source Resistance | 65@10VmOhm |
| Typical Input Capacitance @ Vds | 238@8VpF |
| Maximum Continuous Drain Current | 15A |
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