SSD5030P
Краткое описание:
P-CH MOSFET 30V 50A DPAK SMT
Дополнительная информация
P-channel enhancement mode power MOSFET in a TO-252 DPAK surface-mount package. Features a 30V drain-source voltage rating and 50A continuous drain current capability. Offers a low 11mOhm maximum drain-source on-resistance at 10V gate-source voltage. Designed with gull-wing leads and a tab for enhanced thermal performance, this single-element transistor operates from -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.2(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.35(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 61nC |
| Typical Gate Charge @ Vgs | 61@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 11@10VmOhm |
| Typical Input Capacitance @ Vds | 2965@15VpF |
| Maximum Continuous Drain Current | 50A |
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