SSM3J01T(T5LSONY,F

Снят с производства
SSM3J01T(T5LSONY,F - Toshiba
Краткое описание: P-CH MOSFET 30V 1.7A SOT-23 Single Si
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel enhancement mode MOSFET for surface mount applications. Features a 30V maximum drain-source voltage and 1.7A maximum continuous drain current. This single-element transistor is housed in a 3-pin TSM package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operating temperature range is -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case TSM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.6
Package Family Name SOT
Package Height (mm) 0.7
Package Length (mm) 2.9
Radiation Hardening No
Max Operating Temperature 150°C
Maximum Power Dissipation 1250mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 400@4VmOhm
Typical Input Capacitance @ Vds 240@10VpF
Maximum Continuous Drain Current 1.7A

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