SSM3J02F(T5LJRC,F)

Снят с производства
SSM3J02F(T5LJRC,F) - Toshiba
Краткое описание: P-CH MOSFET, 30V, 0.6A, S-MINI, 3-Pin, Si
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel enhancement mode MOSFET, surface mount, single configuration, 3-pin S-Mini package with gull-wing leads. Features 30V drain-source voltage, ±10V gate-source voltage, and 0.6A continuous drain current. Offers 500mΩ maximum drain-source resistance at 4V and 150pF typical input capacitance at 10V. Operates from -55°C to 150°C with 200mW maximum power dissipation.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 500@4VmOhm
Typical Input Capacitance @ Vds 150@10VpF
Maximum Continuous Drain Current 0.6A

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