SSM3J02T(BRA)

Снят с производства
SSM3J02T(BRA) - Toshiba
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Краткое описание: P-CH MOSFET, 30V, 1.5A, SOT, 3-Pin, Si
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel enhancement mode MOSFET for small signal applications. Features a 30V maximum drain-source voltage and 1.5A maximum continuous drain current. Surface mountable in a 3-pin TSM package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operates from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
EU RoHS No
Category Small Signal
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case TSM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.6
Package Family Name SOT
Package Height (mm) 0.7
Package Length (mm) 2.9
Radiation Hardening No
Max Operating Temperature 150°C
Maximum Power Dissipation 1250mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 1.1V
Maximum Drain Source Resistance 500@4VmOhm
Typical Input Capacitance @ Vds 150@10VpF
Maximum Continuous Drain Current 1.5A

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