SSM3J14T(T5L,PP,F)

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SSM3J14T(T5L,PP,F) - Toshiba
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Краткое описание: P-CH MOSFET, 30V, 2.7A, SOT-23, Si, Single
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel, enhancement mode MOSFET for surface mount applications. Features a 30V drain-source voltage rating and a continuous drain current of 2.7A. This single-element silicon transistor is housed in a 3-pin TSM package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 1250mW.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case TSM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.6
Package Family Name SOT
Package Height (mm) 0.7
Package Length (mm) 2.9
Radiation Hardening No
Max Operating Temperature 150°C
Maximum Power Dissipation 1250mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 85@10VmOhm
Typical Input Capacitance @ Vds 413@15VpF
Maximum Continuous Drain Current 2.7A

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