SSM3J14T(T5LJRC,F)
Не рекомендуется для новых проектов
Краткое описание:
P-CH MOSFET, 30V, 2.7A, SOT, Single, Si
Дополнительная информация
P-channel MOSFET, designed for surface mount applications. This single-element silicon transistor features a 30V drain-source voltage and a continuous drain current of 2.7A. It offers a low drain-source on-resistance of 85mOhm at 10V and a typical input capacitance of 413pF at 15V. The component is housed in a 3-pin TSM package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm, and operates within a temperature range of -55°C to 150°C. Maximum power dissipation is rated at 1250mW.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TSM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.6 |
| Package Family Name | SOT |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 2.9 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 85@10VmOhm |
| Typical Input Capacitance @ Vds | 413@15VpF |
| Maximum Continuous Drain Current | 2.7A |
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