SSM3J15F(F)

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SSM3J15F(F) - Toshiba
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Краткое описание: P-CH MOSFET 30V 0.1A S-MINI 3-Pin SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel enhancement mode silicon MOSFET for small signal applications. Features a 30V maximum drain-source voltage and 0.1A maximum continuous drain current. Packaged in a 3-pin S-Mini surface-mount lead-frame with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Offers a maximum power dissipation of 200mW and operates across a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 12000@4VmOhm
Typical Input Capacitance @ Vds 9.1@3VpF
Maximum Continuous Drain Current 0.1A

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