SSM3J15FU(F)

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SSM3J15FU(F) - Toshiba
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Краткое описание: P-CH MOSFET, 30V, 0.1A, Si, SOT-323, Surface Mount
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET transistor, single element, enhancement mode, designed for small signal applications. Features a 30V maximum drain-source voltage and 0.1A maximum continuous drain current. Packaged in a 3-pin USM (SOT-323) surface-mount package with dimensions of 2mm x 1.25mm x 0.9mm. Operates within a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Jedec SOT-323
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Width (mm) 1.25
Package Family Name USM
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 1.7V
Maximum Drain Source Resistance 12000@4VmOhm
Typical Input Capacitance @ Vds 9.1@3VpF
Maximum Continuous Drain Current 0.1A

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