SSM3J16FS(TE85R)

Снят с производства
SSM3J16FS(TE85R) - Toshiba
Увеличить
Краткое описание: P-CH MOSFET, 20V, 0.1A, SOT-416, SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET transistor for surface mount applications. Features 20V drain-source voltage, 0.1A continuous drain current, and 8000 mOhm drain-source resistance at 4V. This single-element, enhancement-mode transistor utilizes pi-MOS VI process technology and is housed in a 3-pin SOT-416 (SSM) plastic package with gull-wing leads. Operating temperature range is -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Jedec SOT-416
EU RoHS No
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case SSM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 0.8
Process Technology pi-MOS VI
Package Family Name SSM
Package Height (mm) 0.7
Package Length (mm) 1.6
Radiation Hardening No
Seated Plane Height (mm) 0.9(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 100mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 1
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance 8000@4VmOhm
Typical Input Capacitance @ Vds 11@3VpF
Maximum Continuous Drain Current 0.1A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.