SSM3J16TE(TE85L,F)
Снят с производства
Краткое описание:
P-CH MOSFET 20V 0.1A Si TESM SMT Single
Дополнительная информация
P-channel enhancement mode MOSFET, designed for small signal applications. Features a 20V maximum drain-source voltage and 0.1A continuous drain current. This single-element silicon transistor is housed in a compact 3-pin TESM surface-mount package with dimensions of 1.4mm x 0.8mm x 0.59mm. Operating temperature range spans from -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TESM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 0.45 |
| Package Material | Plastic |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.59 |
| Package Length (mm) | 1.4 |
| Seated Plane Height (mm) | 0.59 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 8000@4VmOhm |
| Typical Input Capacitance @ Vds | 11@3VpF |
| Maximum Continuous Drain Current | 0.1A |
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