SSM3J331R
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Краткое описание:
P-CH MOSFET, 20V, 4A, SOT-23F, Si
Дополнительная информация
P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 4A continuous drain current. This single-element silicon transistor utilizes U-MOS VI process technology and is housed in a 3-pin SOT-23F lead-frame SMT package with flat leads for surface mounting. Key specifications include a maximum gate threshold voltage of 1V, a low drain-source on-resistance of 55mΩ at 4.5V, and a typical gate charge of 10.4nC at 4.5V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2000mW.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SOT-23F |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Weight (g) | 0.011 |
| Package Width (mm) | 1.8 |
| Process Technology | U-MOS VI |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Length (mm) | 2.9 |
| Seated Plane Height (mm) | 0.8 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 630@10VpF |
| Maximum Continuous Drain Current | 4A |
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