SSM3J332R,LF

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SSM3J332R,LF - Toshiba
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Краткое описание: P-CH JFET SOT-23-3 30V 6A 144mR Surface Mount
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET in SOT-23-3 package for surface mount applications. Features a continuous drain current of 6A and a drain to source breakdown voltage of -30V. Offers a low drain to source resistance of 144mΩ at a gate to source voltage of 12V, with an Rds On max of 42mΩ. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1W. Includes 560pF input capacitance and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Polarity P-CHANNEL
Packaging Tape and Reel
Rds On Max 42mR
Package/Case SOT-23-3
RoHS Compliant Yes
Input Capacitance 560pF
Power Dissipation 1W
Number of Elements 1
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 144mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage -30V

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