SSM3J36FS(TE85L.F)
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Краткое описание:
P-CH MOSFET, 20V, 0.33A, SOT-416, Si, Surface Mount
Дополнительная информация
P-channel enhancement mode MOSFET, single element, silicon. Features 20V drain-source voltage, ±8V gate-source voltage, and 0.33A continuous drain current. Surface mountable in a 3-pin SSM (SOT-416) package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Maximum power dissipation is 150mW, with an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | SOT-416 |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SSM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 0.8 |
| Package Family Name | SSM |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 1.6 |
| Seated Plane Height (mm) | 0.9(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 1.2@4VnC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 43@10VpF |
| Maximum Continuous Drain Current | 0.33A |
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