SSM3K01T(BRA)

Снят с производства
SSM3K01T(BRA) - Toshiba
Краткое описание: N-CH MOSFET 30V 3.2A SOT-23 Surface Mount Single
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode MOSFET for small signal applications. Features a 30V drain-source voltage, 3.2A continuous drain current, and 120mOhm maximum drain-source resistance at 4V. Surface mountable in a 3-pin TSM (SOT) package with gull-wing leads, measuring 2.9mm x 1.6mm x 0.7mm. Operates from -55°C to 150°C with a maximum power dissipation of 1250mW.
PCB 3
ECCN EAR99
PPAP No
EU RoHS No
Category Small Signal
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TSM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.6
Package Family Name SOT
Package Height (mm) 0.7
Package Length (mm) 2.9
Radiation Hardening No
Seated Plane Height (mm) 0.85(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1250mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 1.1V
Maximum Drain Source Resistance 120@4VmOhm
Typical Input Capacitance @ Vds 152@10VpF
Maximum Continuous Drain Current 3.2A

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