SSM3K03FE(TPL3)
Снят с производства
Краткое описание:
N-CH MOSFET 20V 0.1A Si ESM SMT 3-Pin
Дополнительная информация
N-channel enhancement mode silicon MOSFET for small signal applications. Features a 20V drain-source voltage, 0.1A continuous drain current, and 12000 mOhm maximum drain-source resistance at 2.5V. Housed in a 3-pin ESM lead-frame SMT package with flat leads, measuring 1.6mm x 0.85mm x 0.7mm, and a 0.5mm pin pitch. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 100mW.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | ESM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 0.85 |
| Package Family Name | ESM |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 1.6 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.7 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | 10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 11@3VpF |
| Maximum Continuous Drain Current | 0.1A |
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