SSM3K126TU

Снят с производства
SSM3K126TU - Toshiba
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Краткое описание: N-CH MOSFET 30V 3.9A Si UFM SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode MOSFET for surface mount applications. Features 30V maximum drain-source voltage and 3.9A maximum continuous drain current. This single-element transistor is housed in a compact 3-pin UFM package with dimensions of 2mm x 1.7mm and a 0.65mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 32mΩ at 10V and a typical gate charge of 20.5nC at 10V. Operating temperature range spans from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case UFM
AEC Qualified No
Configuration Single
Pin Pitch (mm) 0.65
Package Width (mm) 1.7
Package Length (mm) 2
Radiation Hardening No
Max Operating Temperature 150°C
Maximum Power Dissipation 800mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 20.5nC
Typical Gate Charge @ Vgs 20.5@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 2.6V
Maximum Drain Source Resistance 32@10VmOhm
Typical Input Capacitance @ Vds 720@15VpF
Maximum Continuous Drain Current 3.9A

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