SSM3K14T(T5LJRC,F)

Не рекомендуется для новых проектов
SSM3K14T(T5LJRC,F) - Toshiba
Краткое описание: N-CH MOSFET 30V 4A SOT-23 Si Small Signal
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

N-channel enhancement mode MOSFET for surface mount applications. Features 30V drain-source voltage, 4A continuous drain current, and low 39mOhm drain-source resistance at 10V. This single element transistor utilizes U-MOS II process technology and is housed in a compact 2.9mm x 1.6mm x 0.7mm plastic SOT package with gull-wing leads. Operating temperature range is -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TSM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.6
Process Technology U-MOS II
Package Family Name SOT
Package Height (mm) 0.7
Package Length (mm) 2.9
Radiation Hardening No
Max Operating Temperature 150°C
Maximum Power Dissipation 1250mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs 5@4VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 39@10VmOhm
Typical Input Capacitance @ Vds 460@15VpF
Maximum Continuous Drain Current 4A

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