SSM3K15F(T5L,PP,F)

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SSM3K15F(T5L,PP,F) - Toshiba
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Краткое описание: N-CH MOSFET, 30V, 0.1A, S-MINI, 3-Pin, Si, SM
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel silicon MOSFET, surface mount, S-Mini package, 3-pin, 30V drain-source voltage, 0.1A continuous drain current. Features enhancement mode, single element, 4000 mOhm max drain-source resistance at 4V, and 7.8pF typical input capacitance at 3V. Operates from -55°C to 150°C with 200mW maximum power dissipation.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 4000@4VmOhm
Typical Input Capacitance @ Vds 7.8@3VpF
Maximum Continuous Drain Current 0.1A

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