SSM3K15F(TE85R)

Снят с производства
SSM3K15F(TE85R) - Toshiba
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Краткое описание: N-CH MOSFET, 30V, 0.1A, S-Mini, Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Silicon MOSFET, small signal, enhancement mode, single element. Features 30V drain-source voltage, 0.1A continuous drain current, and 4000 mOhm maximum drain-source resistance at 4V. Packaged in a 3-pin S-Mini surface-mount plastic lead-frame SMT with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates from -55°C to 150°C with a maximum power dissipation of 200mW.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Radiation Hardening No
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 4000@4VmOhm
Typical Input Capacitance @ Vds 7.8@3VpF
Maximum Continuous Drain Current 0.1A

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