SSM3K15FU(T5L,H)

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SSM3K15FU(T5L,H) - Toshiba
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Краткое описание: N-CH MOSFET 30V 0.1A Si USM 3-Pin SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode silicon MOSFET for small signal applications. Features a 30V drain-source voltage rating and 0.1A continuous drain current. Packaged in a 3-pin USM (SOT-323) surface-mount case with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum drain-source resistance of 4000 mOhm at 4V and typical input capacitance of 7.8pF at 3V. Operates within a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Jedec SOT-323
EU RoHS No
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Width (mm) 1.25
Package Family Name USM
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 4000@4VmOhm
Typical Input Capacitance @ Vds 7.8@3VpF
Maximum Continuous Drain Current 0.1A

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