SSM3K329R,LF

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SSM3K329R,LF - Toshiba
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Краткое описание: N-CH JFET 30V 3.5A SOT-23-3 Surface Mount
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET in a SOT-23-3 surface mount package. Features a continuous drain current of 3.5A and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source resistance of 290mΩ at a gate-to-source voltage of 12V. Includes a maximum power dissipation of 1W and exhibits turn-on delay time of 9.2ns and turn-off delay time of 6.4ns. RoHS compliant and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Height 880um
Polarity N-CHANNEL
Packaging Tape and Reel
Rds On Max 126mR
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 123pF
Power Dissipation 1W
Number of Channels 1
Turn-On Delay Time 9.2ns
Turn-Off Delay Time 6.4ns
Max Power Dissipation 1W
Drain to Source Resistance 290mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.5A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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