SSM3K335R

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SSM3K335R - Toshiba
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Краткое описание: N-CH MOSFET 30V 6A SOT-23F Surface Mount
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET in a 3-pin SOT-23F surface-mount package. Features a 30V drain-source voltage, 6A continuous drain current, and 38mΩ maximum drain-source resistance at 10V. Utilizes U-MOS VII-H process technology for efficient operation. Designed for automotive applications with a wide operating temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive Yes
Lead Shape Flat
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case SOT-23F
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.011
Package Width (mm) 1.8
Process Technology U-MOS VII-H
Package Description Small Outline Transistor
Package Family Name SOT
Package Length (mm) 2.9
Seated Plane Height (mm) 0.8
Max Operating Temperature 150°C
Maximum Power Dissipation 2000mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs [email protected]nC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 2.5V
Maximum Drain Source Resistance 38@10VmOhm
Typical Input Capacitance @ Vds 340@15VpF
Maximum Continuous Drain Current 6A

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