SSM3K35MFV(TL3,T)
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Краткое описание:
Single N-Channel Enhancement MOSFET, 20V, 0.18A, 150mW, VESM
Дополнительная информация
The SSM3K35MFV(TL3,T) is a single N-channel enhancement MOSFET from Toshiba with a maximum drain source voltage of 20V and maximum continuous drain current of 0.18A. It has a maximum power dissipation of 150mW and is packaged in the VESM package. The device is suitable for surface mount applications and has a minimum operating temperature of -55°C and a maximum operating temperature of 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | VESM |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.4 |
| Package Material | Plastic |
| Package Width (mm) | 0.8 |
| Package Length (mm) | 1.2 |
| Seated Plane Height (mm) | 0.5 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | 3000@4VmOhm |
| Typical Input Capacitance @ Vds | 9.5@3VpF |
| Maximum Continuous Drain Current | 0.18A |
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