SSM3K7002FU(BRA,F)

Не рекомендуется для новых проектов
SSM3K7002FU(BRA,F) - Toshiba
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Краткое описание: N-CH MOSFET, 60V, 0.2A, Si, SOT-323, Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NRND)

Дополнительная информация

N-channel enhancement mode silicon MOSFET for small signal applications. Features a 60V drain-source voltage, 0.2A continuous drain current, and 3000mOhm maximum drain-source resistance at 10V. Packaged in a 3-pin USM (SOT-323) surface-mount configuration with dimensions of 2mm x 1.25mm x 0.9mm. Operates across a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Jedec SOT-323
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case USM
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Width (mm) 1.25
Package Family Name USM
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 60V
Maximum Drain Source Resistance 3000@10VmOhm
Typical Input Capacitance @ Vds 17@25VpF
Maximum Continuous Drain Current 0.2A

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