SSM4532
Краткое описание:
Dual N/P-CH MOSFET 25V/30V 5.5A/4.5A SOIC 8-Pin
Дополнительная информация
Dual N-channel/P-channel enhancement mode power MOSFET in an 8-pin SO package. Features 25V drain-source voltage for N-channel and 30V for P-channel, with continuous drain currents of 5.5A (N-channel) and 4.5A (P-channel). Offers low on-resistance of 40mOhm (N-channel) and 55mOhm (P-channel) at 10V gate-source voltage. Surface-mount design with gull-wing leads, suitable for lead-frame SMT applications. Maximum power dissipation of 2000mW across an operating temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.99(Max) |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.75(Max) |
| Package Length (mm) | 4.98(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 15.5@P ChannelnC |
| Typical Gate Charge @ Vgs | [email protected]@N Channel|15.5@10V|[email protected]@P ChannelnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 25@N Channel|30@P ChannelV |
| Maximum Drain Source Resistance | 40@10V@N Channel|55@10V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 512@8V@N Channel|395@15V@P ChannelpF |
| Maximum Continuous Drain Current | 5.5@N Channel|4.5@P ChannelA |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
