SSM4953
Краткое описание:
P-CH MOSFET, 30V, 4.5A, Dual Drain, SOIC, SMT
Дополнительная информация
P-channel Power MOSFET, 30V drain-source voltage, 4.5A continuous drain current. Features dual dual drain configuration with two elements per chip. Surface mountable in an 8-pin SO package with gull-wing leads, measuring 4.98mm x 3.99mm x 1.75mm maximum. Offers 55mOhm maximum drain-source resistance at 10V and 2000mW maximum power dissipation.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.99(Max) |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.75(Max) |
| Package Length (mm) | 4.98(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 13nC |
| Typical Gate Charge @ Vgs | 13@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 55@10VmOhm |
| Typical Input Capacitance @ Vds | 560@15VpF |
| Maximum Continuous Drain Current | 4.5A |
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