SSM5G02TU(TE85L,F)
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Краткое описание:
Single P-Channel Enhancement MOSFET, 12V, 1A, 800mW, UFV Package
Дополнительная информация
The SSM5G02TU(TE85L,F) is a single P-channel enhancement mode MOSFET from Toshiba with a maximum drain source voltage of 12V and maximum continuous drain current of 1A. It features a maximum power dissipation of 800mW and is packaged in the UFV package. The device has a seated plane height of 0.7mm and a pin pitch of 0.65mm. It operates over a temperature range of -40°C to 85°C.
| PCB | 5 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 5 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | UFV |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Width (mm) | 1.7 |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.7 |
| Max Operating Temperature | 85°C |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -40°C |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 12V |
| Maximum Drain Source Resistance | 160@4VmOhm |
| Typical Input Capacitance @ Vds | 310@10VpF |
| Maximum Continuous Drain Current | 1A |
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