SSM5H01TU(BRA,F)
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Краткое описание:
N-Channel Enhancement MOSFET, 30V, 1.4A, 800mW, UFV Package
Дополнительная информация
The SSM5H01TU(BRA,F) is a single N-channel enhancement MOSFET from Toshiba with a maximum drain source voltage of 30V and a maximum continuous drain current of 1.4A. It has a maximum power dissipation of 800mW and is packaged in the UFV package. The device is suitable for surface mount applications and has an operating temperature range of -40°C to 100°C.
| PCB | 5 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 5 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | UFV |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 1.7 |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.7 |
| Max Operating Temperature | 100°C |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -40°C |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 200@10VmOhm |
| Typical Input Capacitance @ Vds | 106@15VpF |
| Maximum Continuous Drain Current | 1.4A |
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