SSM5N05FU(BRA,F)

Снят с производства
SSM5N05FU(BRA,F) - Toshiba
Краткое описание: N-CH MOSFET 20V 0.4A 5-Pin SOT USV
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET, 20V drain-source voltage, 0.4A continuous drain current. Features dual common source configuration with 2 elements per chip. Surface mountable in a 5-pin USV package (SOT family) with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm. Operating temperature range from -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case USV
AEC Qualified No
Configuration Dual Common Source
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.006
Package Width (mm) 1.25
Package Family Name SOT
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±12V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance 800@4VmOhm
Typical Input Capacitance @ Vds 22@3VpF
Maximum Continuous Drain Current 0.4A

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