SSM5N05FU(TE85L,F)

Снят с производства
SSM5N05FU(TE85L,F) - Toshiba
Увеличить
Краткое описание: N-CH MOSFET 20V 0.4A 5-Pin USV SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 0.4A continuous drain current. This 5-pin USV package, a lead-frame SMT type with gull-wing leads, offers a 0.65mm pin pitch and dimensions of 2mm (L) x 1.25mm (W) x 0.9mm (H). The dual common source configuration utilizes silicon material with a maximum drain-source resistance of 800 mOhm at 4V and a typical input capacitance of 22pF at 3V. Maximum power dissipation is 300mW, with an operating temperature range of -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case USV
AEC Qualified No
Configuration Dual Common Source
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.006
Package Width (mm) 1.25
Package Family Name SOT
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±12V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance 800@4VmOhm
Typical Input Capacitance @ Vds 22@3VpF
Maximum Continuous Drain Current 0.4A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.