SSM5N15FE(BRA)

Снят с производства
SSM5N15FE(BRA) - Toshiba
Краткое описание: N-CH MOSFET 30V 0.1A Dual Common Source SMT ESV
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode MOSFET, designed for small signal applications. Features a 30V maximum drain-source voltage and 0.1A maximum continuous drain current. This dual common source configured transistor is housed in a 5-pin ESV lead-frame SMT package with a 0.5mm pin pitch. Surface mountable with a plastic package material, it operates across a temperature range of -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Flat
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case ESV
AEC Qualified No
Configuration Dual Common Source
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.2
Package Family Name SOT
Package Height (mm) 0.55
Package Length (mm) 1.6
Radiation Hardening No
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 4000@4VmOhm
Typical Input Capacitance @ Vds 7.8@3VpF
Maximum Continuous Drain Current 0.1A

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