SSM5N15FU(BRA,F)

Снят с производства
SSM5N15FU(BRA,F) - Toshiba
Краткое описание: MOSFET N-CH Si 30V 0.1A 5-Pin SOT-353 USV
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Silicon MOSFET, dual configuration, small signal enhancement mode. Features 30V drain-source voltage and 0.1A continuous drain current. Surface mountable in a 5-pin USV (SOT-353) package with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm. Maximum power dissipation is 200mW, with an operating temperature range of -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
Jedec SOT-353
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case USV
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.006
Package Width (mm) 1.25
Package Family Name SOT
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 4000@4VmOhm
Typical Input Capacitance @ Vds 7.8@3VpF
Maximum Continuous Drain Current 0.1A

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