SSM5N15FU(TE85L,F)

Производится
SSM5N15FU(TE85L,F) - Toshiba
Увеличить
Краткое описание: N-CH MOSFET 30V 0.1A 5-Pin SOT-353 Dual Si
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode MOSFET, dual configuration, designed for surface mounting. Features 30V drain-source voltage, 0.1A continuous drain current, and a 5-pin USV (SOT-353) package with gull-wing leads. This small signal transistor offers a maximum drain-source resistance of 4000 mOhm at 4V and typical input capacitance of 7.8pF at 3V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 200mW.
PCB 5
ECCN EAR99
PPAP No
Jedec SOT-353
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case USV
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.006
Package Width (mm) 1.25
Package Family Name SOT
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 4000@4VmOhm
Typical Input Capacitance @ Vds 7.8@3VpF
Maximum Continuous Drain Current 0.1A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.