SSM5N16FE(TPL3)

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SSM5N16FE(TPL3) - Toshiba
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Краткое описание: N-CH MOSFET 20V 0.1A 5-Pin ESV SMT
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET, 20V Drain-Source Voltage, 0.1A Continuous Drain Current, and 1.1V Gate Threshold Voltage. This dual common source transistor features a 5-pin ESV surface-mount package with a 0.5mm pin pitch, measuring 1.6mm x 1.2mm x 0.55mm. Constructed from silicon, it offers a maximum Drain-Source On-Resistance of 3000 mOhm at 4V and a typical input capacitance of 9.3pF at 3V. Operating temperature range is -55°C to 150°C.
PCB 5
ECCN EAR99
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Lead Shape Flat
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case ESV
Configuration Dual Common Source
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.2
Package Family Name SOT
Package Height (mm) 0.55
Package Length (mm) 1.6
Radiation Hardening No
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Gate Threshold Voltage 1.1V
Maximum Drain Source Resistance 3000@4VmOhm
Typical Input Capacitance @ Vds 9.3@3VpF
Maximum Continuous Drain Current 0.1A

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