SSM5N16FUTE85LF

Производится
SSM5N16FUTE85LF - Toshiba
Увеличить
Краткое описание: N-Channel 2-Channel 20V 100mA SOT-353-5 Surface Mount p-MOSVI Transistor
Производитель Toshiba
Категория Транзисторы
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SSM5N16FUTE85LF is a Toshiba p-MOSVI transistor with a maximum drain to source voltage of 20V and continuous drain current of 100mA. It features a maximum drain to source resistance of 5.2 ohms and a maximum power dissipation of 200mW. The transistor is packaged in a SOT-353-5 surface mount package and is available in quantities of 3000 per reel. It operates over a temperature range of -40°C to 125°C.
RoHS Compliant
Mount Surface Mount
Series p-MOSVI
Polarity N-CHANNEL
Packaging Tape and Reel
Rds On Max 3R
Package/Case SOT-353-5
Package Quantity 3000
Input Capacitance 9.3pF
Number of Channels 2
Turn-On Delay Time 70ns
Turn-Off Delay Time 125ns
Max Power Dissipation 200mW
Drain to Source Resistance 5.2R
Gate to Source Voltage (Vgs) 1.1V
Continuous Drain Current (ID) 100mA
Drain to Source Voltage (Vdss) 20V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.