SSM5P05FU(BRA)

Снят с производства
SSM5P05FU(BRA) - Toshiba
Увеличить
Краткое описание: P-CH MOSFET 20V 0.2A 5-Pin SOT USV
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET transistor, 20V drain-source voltage, 0.2A continuous drain current. Features dual common source configuration in a 5-pin USV package with gull-wing leads for surface mounting. Silicon enhancement mode device with a maximum gate threshold voltage of 1.1V and 3300 mOhm drain-source resistance at 4V. Operating temperature range from -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
EU RoHS No
Category Small Signal
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type P
Package/Case USV
AEC Qualified No
Configuration Dual Common Source
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.006
Package Width (mm) 1.25
Package Family Name SOT
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 0.95
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±12V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Gate Threshold Voltage 1.1V
Maximum Drain Source Resistance 3300@4VmOhm
Typical Input Capacitance @ Vds 27@3VpF
Maximum Continuous Drain Current 0.2A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.