SSM6930
Краткое описание:
N-CH MOSFET 55V 4.8A Dual Dual Drain SO 8-Pin
Дополнительная информация
N-channel Power MOSFET featuring a dual dual-drain configuration. This surface-mount component operates with a maximum drain-source voltage of 55V and a continuous drain current of 4.8A. It offers a low drain-source on-resistance of 45mOhm at 10V. The 8-pin SO package, constructed from plastic with gull-wing leads, measures 4.98mm(L) x 3.99mm(W) x 1.75mm(H). Typical gate charge is 18nC at 10V, with input capacitance at 902pF @ 25V.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.99(Max) |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.75(Max) |
| Package Length (mm) | 4.98(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 18nC |
| Typical Gate Charge @ Vgs | 18@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 55V |
| Maximum Drain Source Resistance | 45@10VmOhm |
| Typical Input Capacitance @ Vds | 902@25VpF |
| Maximum Continuous Drain Current | 4.8A |
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