SSM6J06FU(T5RSONY)

Снят с производства
SSM6J06FU(T5RSONY) - Toshiba
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Краткое описание: P-CH MOSFET, 20V, 0.65A, Si, SOT-363, 6-Pin, SM
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel enhancement mode MOSFET for small signal applications. Features a 20V maximum drain-source voltage and 0.65A maximum continuous drain current. This surface-mount device utilizes a 6-pin US package (SOT-363) with a 500 mOhm maximum drain-source resistance at 4V. Operating temperature range is -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
Jedec SOT-363
EU RoHS No
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case US
AEC Qualified No
Configuration Single Quad Drain
RoHS Versions 2011/65/EU, 2015/863
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±12V
Number of Elements per Chip 1
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance 500@4VmOhm
Typical Input Capacitance @ Vds 160@10VpF
Maximum Continuous Drain Current 0.65A

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