SSM6J07FU(T5LNIKDE

Снят с производства
SSM6J07FU(T5LNIKDE - Toshiba
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Краткое описание: P-CH MOSFET, 30V, 0.8A, SOT-363, Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel enhancement mode MOSFET for small signal applications. Features a 30V drain-source voltage and 0.8A continuous drain current. Packaged in a compact 6-pin US (SOT-363) surface mount configuration with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum drain-source on-resistance of 450mΩ at 10V.
PCB 6
ECCN EAR99
PPAP No
Jedec SOT-363
EU RoHS No
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case US
AEC Qualified No
Configuration Single Quad Drain
RoHS Versions 2011/65/EU, 2015/863
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 450@10VmOhm
Typical Input Capacitance @ Vds 130@15VpF
Maximum Continuous Drain Current 0.8A

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