SSM6K06FU(BRA)
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Краткое описание:
MOSFET N-CH Si 20V 1.1A SOT-363 6-Pin SM
Дополнительная информация
N-channel enhancement mode silicon MOSFET, surface mountable in a 6-pin SOT-363 (US) package. Features a maximum drain-source voltage of 20V and a continuous drain current of 1.1A. Offers a low drain-source on-resistance of 160mΩ at 4V gate-source voltage. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 300mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | SOT-363 |
| EU RoHS | No |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | US |
| AEC Qualified | No |
| Configuration | Single Quad Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Weight (g) | 0.0068 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | 160@4VmOhm |
| Typical Input Capacitance @ Vds | 125@10VpF |
| Maximum Continuous Drain Current | 1.1A |
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